EEL 3300 Electronics I

Spring 2001

Catalog Description:

Diode models and circuits; DC biasing of bipolar-junction (BJT) and field-effect transistors (FET); small-and large-signal transistor models, frequency analysis of single-stage AC amplifiers.

Prerequisites: EEL 3112 (grading C or better)

Required Textbooks: Mark N. Horenstein, Microelectronic Circuits and Devices, 2nd ed., Prentice Hall, 1996.

Course Topics:

Assessment Methods: Course Goals:The goals of this course are to introduce students to (1) characteristics of diodes and transistors, (2) dc power supplies, (3) single-stage current and voltage amplifies, and (4) frequency response of amplifiers.

Instructional Objectives: At the conclusion of this course, you should be able to

  1. analyze basic circuits using Ohm’s, Kirchhoff’s, and superposition laws, as well as Thevenin and Norton equivalent circuits.
  2. describe the nonlinear I-V characteristics of the p-n junction diode, and solve simple circuits containing two-terminal nonlinear elements.
  3. classify the electronic circuits made from two-terminal nonlinear elements, including clipping, limiting, and rectification, and analyze power-supply circuits.
  4. describe the I-V characteristics of three-terminal devices including field-effect transistor (FET) and bipolar junction transistor (BJT).
  5. analyze basic circuits containing three-terminal devices, and determine the relationship between the input and output voltages.
  6. determine the biasing of single transistor amplifier, explain the function of bias resistors, describe the small-signal model of transistor, and evaluate the small-signal gains of the amplifier using the small-signal model.
  7. determine high- and low-frequency capacitor in amplifiers, and derive frequency response of basic amplifiers.
Instructional Methods:The primary instructional method is a traditional in-class lecture. Students will be expected to complete several in-class quizzes and out-class homework assignments.
 
Date
Lecture
Topics
Assignment
01/08
1
 Syllabus, linear electronic elements  
01/10
2
 Kirchhoff’s and superposition laws  

01/12
3
 Thevenin and Norton equivalent circuits HW1:1.3,1.7,1.8,1.13,1.28,1.31,1.54,1.62,
01/15   No Class, Martin L. King, Jr. Day 1.69,1.73
01/17
4
 RCL time constant  
01/19
5
 Nonlinear elements, graphical analysis  
01/22
6
 Physical picture of diode  HW2:3.3,3.4,3.10,3.20,3.21,3.36,3.40,3.44,
01/24
7
 Physical pictuer of diode linear II 3.47
01/26
8
 IV of diode, graphical method,diode linear mode l  
01/29
9
 Clipping, limiting circuits HW3:3.105,3.107,3.133,3.134,4.3,4.8,4.18,
01/31
10
 Rectifiercuits(half-wave) 4.22,4.32,4.40
02/02
11
 Bridge rectifier, power-supply circuits  
02/05
12
 Zener diode,voltage regulation HW4:4.57,4.58,4.67,4.72,4.76,4.77,4.18
02/07
13
 Three-terminal devices 4.94,4,98,4.101
02/09
14
 JEFTI  
02/12
15
 JEFTII  
02/14
16
 Exam I  
02/16
17
 MOSFET I  
02/19
18
 MOSFE II HW5:5.1,5.5,5.12,5.15,5.25,5.32,5.60,5.98,
02/21
19
 BJT I  
02/23
20
 BJT II, power limitation 5.99,5.108
02/26
21
 Photodiode,LED  
02/28
22
 BJT inverter  
03/02
23
 MOS inverters  
03/05
24
 MOS inverter with MOS load HW6: 6.3,6.5,6.12,6.27,6.62,6.71,6.81
03/07
25
 CMOS inverter  
03/09
26
 BJT and MOS voltage followers  
03/12-03/16   Spring Break  
03/19
27
 BJT and MOS logic inverters HW7: 6.82,6.84,6.90,7.14,7.15,7.16,7.19,
03/21
28
 Bias I 7.24,7.30
03/23
29
 Bias II  
03/26
30
 Bias III HW8: 7.21,7.55,7.62,7.85,7.96,7.99
03/28
31
 BJT small-signal model I  
03/30
32
 Exam II  
04/02
33
 BJT small-signal model II, MOS small-signal model I HW9: 7.104,7.106,7.113,7.119,7.120
04/04
34
 MOS small-signal model II     
04/06
35
 Non-ideal small-signal model   
04/09
36
 Source of capacitance in small-signal model HW10: 9.4,9.5,9.7,9.18,9.23
04/11
37
 Bode plot representation   
04/13
38
 High-frequency capacitor  
04/16
39
 Low-frequency capacitor  
04/18
40
 The dominant-pole concept  HW11: 9.19,9.37,9.45(a,b),9.48 
04/20
41
 instructor’s materials   
04/23-04/27
42
 Final Exam week