Graduate students and advanced undergraduates in electrical
and computer engineering and physics, who are
particularly interested in
the modeling and simulation of VLSI devices and circuits.
Students will be introduced to modern topics in
submicron semiconductor devices and state-of-the art CMOS technology. The
course focuses on the modeling and simulation of
nanoscale MOS devices. Topics that will be covered
include but are not limited to quantum mechanical
effects, high speed devices, effects induced by
scaling, high doping concentration, interface
roughness, and random doping placement.
C language will be extensively
used in the implementation of various numerical algorithms
discussed during the course.