EEL4450/5930: Modeling and Simulation of Semiconductor Devices, Spring 2010

    Course meeting times

      Classes: MWF 11:55-12:45 pm, Rm. 337
      Office hours: MW 2:00-3:00 pm, Rm. B364

    Syllabus

    Target Audience

      Graduate students and advanced undergraduates in electrical and computer engineering and physics, who are particularly interested in the modeling and simulation of VLSI devices and circuits.

    Course description

      Students will be introduced to modern topics in submicron semiconductor devices and state-of-the art CMOS technology. The course focuses on the modeling and simulation of nanoscale MOS devices. Topics that will be covered include but are not limited to quantum mechanical effects, high speed devices, effects induced by scaling, high doping concentration, interface roughness, and random doping placement.

      C language will be extensively used in the implementation of various numerical algorithms discussed during the course.


    Other materials

  • Here is a short introduction to Maple.
  • Project 6 (the file was last updated on Thursday October 28 at 9am)
  • You can use this C code to solve linear systems in C: gauss.cpp
  • Project 7 (only for graduate students)
  • Here is the format of the article that you need to write if you choose Option 1 in Project 7.
  • Here is the score sheet that will be used to grade each presentation.