|
|
Day |
Date |
Topic |
Problem Sets |
Solutions |
|
| 1 |
Tu |
8/26/08 |
Crystal structure (1) |
|
|
|
| 2 |
Th |
8/28/08 |
Crystal structure (2) |
HW#1: 1.3, 1.5, 1.17, 1.18, 1.20
Due
09/09/08 |
Solution |
|
| 3 |
Tu |
9/2/08 |
Energy levels in atomic systems (H atoms, Si atoms, Si crystals) |
|
|
|
| 4 |
Th |
9/4/08 |
Density of states, Fermi distribution
function, Electron and hole concentration in
semiconductor systems at thermal equilibrium |
|
|
|
| 5 |
Tu |
9/9/08 |
Nondegenerate/degenerate
semiconductors. Equations for intrinsic
semiconductors |
|
|
|
| 6 |
Th |
9/11/08 |
Doped semiconductors. n, p, Fermi
level. Temperature dependence |
HW#2: 1.22, 1.27, 1.28, 2.19, 2.21,
2.32
Due 09/23/08 |
Solution |
|
| 7 |
Tu |
9/16/08 |
Drift current, Sheet resistance |
|
|
|
| 8 |
Th |
9/18/08 |
Band bending. Diffusion current,
Einstein relations |
|
|
|
| 9 |
Tu |
9/23/08 |
Generation-recombination processes |
HW#3: 3.7, 3.15, 3.18, 3.20, 3.23
Due 09/30/08 |
Solution |
|
| 10 |
Th |
9/25/08 |
Current continuity equations |
|
|
|
| 11 |
Tu |
9/30/08 |
Basic equations in semiconductors.
Semiconductor bar illuminated at t = 0. |
HW#4 |
Solution |
|
| 12 |
Th |
10/2/08 |
Basic equations in semiconductors.
Problems with semiconductors in nonequilibrium |
|
|
|
| 13 |
Tu |
10/7/08 |
Quasi-Fermi potentials.
Optoelectronic devices |
|
|
|
| 14 |
Th |
10/9/08 |
Review |
|
|
|
| 15 |
Tu |
10/14/08 |
First Midterm Exam |
|
|
|
| 16 |
Th |
10/16/08 |
pn-junctions |
HW#5: 6.2, 6.3, 6.5, 6.7, 6.27, 6.28
Due 09/28/08 |
Solution |
|
| 17 |
Tu |
10/21/08 |
Problems with semiconductors:
depletion approximation, charge neutrality
approximation. Discuss the first midterm exam |
|
|
|
| 18 |
Th |
10/23/08 |
p-n junctions (1) |
|
|
|
| 19 |
Tu |
10/28/08 |
p-n junctions (2) |
HW#6 |
Solution |
|
| 20 |
Th |
10/30/08 |
BJT: structure, principle of
operation |
|
|
|
| 21 |
Tu |
11/4/08 |
BJT: Ebers-Moll equation |
|
|
|
| 22 |
Th |
11/6/08 |
JFET, MESFET: structure, principle of
operation |
HW #7 |
Solution |
|
| 23 |
Tu |
11/11/08 |
JFET, MESFET: I-V characteristics,
small-signal characteristics; MOS-C |
|
|
|
| 24 |
Th |
11/13/08 |
MOSFETs: structure, principle of
operation |
|
|
|
| 25 |
Tu |
11/18/08 |
MOSFETs: large-signal, small-signal |
HW#8 |
Solution |
|
| 26 |
Th |
11/20/08 |
MOSFETs: short-channel effects,
random-doping fluctuations, nanoscale effects |
|
|
|
| 27 |
Tu |
11/25/08 |
Second Midterm Exam |
HW#9 |
|
|
| 26 |
Th |
11/27/08 |
|
|
|
|
| 27 |
Tu |
12/2/08 |
LEDs, Photodiodes, Solar Cells |
|
|
|
| 28 |
Th |
12/4/08 |
Review |
|
|
|
|
|
|
FINAL EXAM |
Formula sheet |
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